Samsung M471B5273BH1-CF8 Specifications

Browse online or download Specifications for Memory modules Samsung M471B5273BH1-CF8. Samsung M471B5273BH1-CF8 memory module User Manual

  • Download
  • Add to my manuals
  • Print
  • Page
    / 29
  • Table of contents
  • BOOKMARKS
  • Rated. / 5. Based on customer reviews
Page view 0
Rev. 1.03 June 2009
1 of 29
DDR3 SDRAM
Unbuffered SoDIMM
DDR3 SDRAM Specification
204pin Unbuffered SODIMM based on 2Gb B-die
64-bit Non-ECC
78FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
* Samsung Electronics reserves the right to change products or specification without notice.
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER-
WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL-
OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT
GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
Page view 0
1 2 3 4 5 6 ... 28 29

Summary of Contents

Page 1 - DDR3 SDRAM Specification

Rev. 1.03 June 2009 1 of 29DDR3 SDRAMUnbuffered SoDIMMDDR3 SDRAM Specification204pin Unbuffered SODIMM based on 2Gb B-die64-bit Non-ECC78FBGA with Lea

Page 2

Rev. 1.03 June 2009 10 of 29DDR3 SDRAMUnbuffered SoDIMM8.0 Absolute Maximum Ratings8.1 Absolute Maximum DC RatingsNote :1. Stresses greater than those

Page 3

Rev. 1.03 June 2009 11 of 29DDR3 SDRAMUnbuffered SoDIMM10.0 AC & DC Input Measurement Levels10.1 AC & DC Logic Input Levels for Single-ended S

Page 4

Rev. 1.03 June 2009 12 of 29DDR3 SDRAMUnbuffered SoDIMM10.2 VREF Tolerances.The dc-tolerance limits and ac-noise limits for the reference voltages VRE

Page 5

Rev. 1.03 June 2009 13 of 29DDR3 SDRAMUnbuffered SoDIMM10.3 AC and DC Logic Input Levels for Differential Signals10.3.1 Differential Signals Definitio

Page 6

Rev. 1.03 June 2009 14 of 29DDR3 SDRAMUnbuffered SoDIMM10.3.3 Single-ended Requirements for Differential SignalsEach individual component of a differe

Page 7

Rev. 1.03 June 2009 15 of 29DDR3 SDRAMUnbuffered SoDIMM10.3.4 Differential Input Cross Point VoltageTo guarantee tight setup and hold times as well as

Page 8

Rev. 1.03 June 2009 16 of 29DDR3 SDRAMUnbuffered SoDIMM11.0 AC & DC Output Measurement Levels11.1 Single Ended AC and DC Output LevelsSingle Ended

Page 9

Rev. 1.03 June 2009 17 of 29DDR3 SDRAMUnbuffered SoDIMM11.4 Differential Output Slew RateWith the reference load for timing measurements, output slew

Page 10 - Unbuffered SoDIMM

Rev. 1.03 June 2009 18 of 29DDR3 SDRAMUnbuffered SoDIMM12.0 IDD specification definitionSymbol DescriptionIDD0 Operating One Bank Active-Precharge Cur

Page 11

Rev. 1.03 June 2009 19 of 29DDR3 SDRAMUnbuffered SoDIMMa) Burst Length: BL8 fixed by MRS: set MR0 A[1,0]=00Bb) Output Buffer Enable: set MR1 A[12] = 0

Page 12

Rev. 1.03 June 2009 2 of 29DDR3 SDRAMUnbuffered SoDIMM1.0 DDR3 Unbuffered SoDIMM Ordering Information ...

Page 13

Rev. 1.03 June 2009 20 of 29DDR3 SDRAMUnbuffered SoDIMM12.1 IDD SPEC TableM471B5273BH1 : 4GB (512Mx64) Module13.0 Input/Output Capacitance13.1 2Rx16 1

Page 14

Rev. 1.03 June 2009 21 of 29DDR3 SDRAMUnbuffered SoDIMM14.0 Electrical Characteristics and AC timing (0 °C<TCASE ≤95 °C, VDDQ = 1.5V ±

Page 15

Rev. 1.03 June 2009 22 of 29DDR3 SDRAMUnbuffered SoDIMM14.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin DDR3 SDRAM Spe

Page 16

Rev. 1.03 June 2009 23 of 29DDR3 SDRAMUnbuffered SoDIMM14.3.1 Speed Bin Table NotesAbsolute Specification (TOPER; VDDQ = VDD = 1.5V +/- 0.075 V);Note

Page 17

Rev. 1.03 June 2009 24 of 29DDR3 SDRAMUnbuffered SoDIMM15.0 Timing Parameters for DDR3-1066 and DDR3-1333Timing Parameters by Speed BinSpeed DDR3-1066

Page 18

Rev. 1.03 June 2009 25 of 29DDR3 SDRAMUnbuffered SoDIMMTiming Parameters by Speed Bin (Cont.)Speed DDR3-1066 DDR3-1333Units NoteParameter Symbol MIN M

Page 19

Rev. 1.03 June 2009 26 of 29DDR3 SDRAMUnbuffered SoDIMMTiming Parameters by Speed Bin (Cont.)Speed DDR3-1066 DDR3-1333Units NoteParameter Symbol MIN M

Page 20

Rev. 1.03 June 2009 27 of 29DDR3 SDRAMUnbuffered SoDIMM15.1 Jitter NotesSpecific Note a Unit ’tCK(avg)’ represents the actual tCK(avg) of the input

Page 21

Rev. 1.03 June 2009 28 of 29DDR3 SDRAMUnbuffered SoDIMM15.2 Timing Parameter Notes1. Actual value dependant upon measurement level definitions which

Page 22

Rev. 1.03 June 2009 29 of 29DDR3 SDRAMUnbuffered SoDIMM16.0 Physical Dimensions :16.1 256Mbx8 based 512Mx64 Module (2 Ranks)The used device is 256M x8

Page 23

Rev. 1.03 June 2009 3 of 29DDR3 SDRAMUnbuffered SoDIMM15.0 Timing Parameters for DDR3-1066 and DDR3-1333 ...

Page 24

Rev. 1.03 June 2009 4 of 29DDR3 SDRAMUnbuffered SoDIMMRevision HistoryRevision Month Year History1.0 December 2008 - First Release1.01 February 2009

Page 25

Rev. 1.03 June 2009 5 of 29DDR3 SDRAMUnbuffered SoDIMM1.0 DDR3 Unbuffered SoDIMM Ordering InformationNote :* ## : F8 / H9** F8 : 1066Mbps 7-7-7, H9

Page 26

Rev. 1.03 June 2009 6 of 29DDR3 SDRAMUnbuffered SoDIMM4.0 x64 DIMM Pin Configurations (Front side/Back Side)Note :1. NC = No Connect, NU = Not Usable,

Page 27

Rev. 1.03 June 2009 7 of 29DDR3 SDRAMUnbuffered SoDIMM5.0 Pin Description *The VDD and VDDQ pins are tied common to a single power-plane on these desi

Page 28

Rev. 1.03 June 2009 8 of 29DDR3 SDRAMUnbuffered SoDIMM6.0 Input/Output Functional DescriptionSymbol Type FunctionCK0-CK1CK0-CK1InputThe system clock i

Page 29

Rev. 1.03 June 2009 9 of 29DDR3 SDRAMUnbuffered SoDIMM7.0 Function Block Diagram:7.1 4GB, 512Mx64 Module (Populated as 2 ranks of x8 DDR3 SDRAMs)V7V8V

Comments to this Manuals

No comments