Samsung MMCRE28G5MXP-0VB00 Datasheet download pdf (Page 24)

JANUARY 2009

www.samsung.com/semi/sram

QDRI/II/II+

QDR SYNCHRONOUS SRAM

Type Density Organization Part

Number

# Pins-

Package

Vdd (V) Access Time

tCD (ns)

Cycle Time

(MHz)

I/O Voltage

(V)

Production

Status

Comments

QDR II

72Mb

8M x9 K7R640982M 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II-2B

4M x18

K7R641882M 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II-2B

K7R641884M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II-4B

2M x36

K7R643682M 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II-2B

K7R643684M 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II-4B

36Mb

4M x9 K7R320982C 165-FBGA 1.8 0.45 300, 250, 200 1.5,1.8 Mass Production QDR II-2B

2M x18

K7R321882C 165-FBGA 1.8 0.45 300, 250, 200 1.5,1.8 Mass Production QDR II-2B

K7R321884C 165-FBGA 1.8 0.45 333, 300, 250 1.5,1.8 Mass Production QDR II-4B

1M x36

K7R323682C 165-FBGA 1.8 0.45 300, 250, 200 1.5,1.8 Mass Production QDR II-2B

K7R323684C 165-FBGA 1.8 0.45 333, 300, 250 1.5,1.8 Mass Production QDR II-4B

QDR I,

QDR II

18Mb

2M x9 K7R160982B 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II - 2B

1M x18

K7R161882B 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II - 2B

K7R161884B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II - 4B

K7Q161862B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 2B

K7Q161864B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 4B

512K x36

K7R163682B 165-FBGA 1.8 0.45,0.45,0.50 250,200,167 1.5,1.8 Mass Production QDR II - 2B

K7R163684B 165-FBGA 1.8 0.45,0.45,0.45,0.50 300,250,200,167 1.5,1.8 Mass Production QDR II - 4B

K7Q163662B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 2B

K7Q163664B 165-FBGA 1.8v / 2.5v 2.5 167 1.5,1.8 Mass Production QDR I - 4B

QDR

II+

36Mb

1M x36 K7S3218T4C 165-FBGA 1.8 0.45 450, 400, 333 1.5 Mass Production QDR II + 4B

2M x18 K7S3236T4C 165-FBGA 1.8 0.45 450, 400, 333 1.5 Mass Production QDR II + 4B

18Mb

1M x18 K7S1618T4C 165-FBGA 1.8 0.45 450, 400, 333 1.5 Mass Production QDR II + 4B

512K x36 K7S1636T4C 165-FBGA 1.8 0.45 450, 400, 333 1.5 Mass Production QDR II + 4B

NOTES: For QDR I, QDR II: 2B = Burst of 2, 4B = Burst of 4

For QDR II (36Mb): C-die use 300, 250MHz or 200MHz instead of 167MHz using a stable DLL circuit

For QDR II (72Mb): 2B = Burst of 2 and 250MHz or 200MHz is recommended, 4B = Burst of 4 and 300MHz or 250MHz is recommended

For QDR II+: 2-clock latency supported. 2.5-clock latency can be supported with 450MHz speed

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Samsung MMCRE28G5MXP-0VB00 Datasheet Page 24

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