Samsung YP-P10 User Manual Page 224

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NAND FLASH CONTROLLER S3C2440A RISC MICROPROCESSOR
6-12
NAND FLASH CONFIGURATION REGISTER
Register Address R/W Description Reset Value
NFCONF 0x4E000000 R/W NAND flash configuration register 0x0000100X
NFCONF Bit Description Initial State
Reserved [15:14] Reserved
TACLS [13:12] CLE & ALE duration setting value (0~3)
Duration = HCLK x TACLS
01
Reserved [11] Reserved 0
TWRPH0 [10:8] TWRPH0 duration setting value (0~7)
Duration = HCLK x ( TWRPH0 + 1 )
000
Reserved [7] Reserved 0
TWRPH1 [6:4] TWRPH1 duration setting value (0~7)
Duration = HCLK x ( TWRPH1 + 1 )
000
AdvFlash (Read only) [3] Advance NAND flash memory for auto-booting
0: Support 256 or 512 byte/page NAND flash memory
1: Support 1024 or 2048 byte/page NAND flash memory
This bit is determined by NCON0 pin status during reset
and wake-up from sleep mode.
H/W Set
(NCON0)
PageSize (Read only) [2] NAND flash memory page size for auto-booting AdvFlash
PageSize
When AdvFlash is 0,
0: 256 Word/page, 1: 512 Bytes/page
When AdvFlash is 1,
0: 1024 Word/page, 1: 2048 Bytes/page
This bit is determined by GPG13 pin status during reset
and wake-up from sleep mode. After reset, the GPG13 can
be used as general I/O port or External interrupt.
H/W Set
(GPG13)
AddrCycle (Read only) [1] NAND flash memory Address cycle for auto-booting
AdvFlash AddrCycle
When AdvFlash is 0,
0: 3 address cycle 1: 4 address cycle
When AdvFlash is 1,
0: 4 address cycle 1: 5 address cycle
This bit is determined by GPG14pin status during reset
and wake-up from sleep mode. After reset, the GPG14can
be used as general I/O port or External interrupt.
H/W Set
(GPG14)
BusWidth (R/W) [0] NAND Flash Memory I/O bus width for auto-booting and
general access.
0: 8-bit bus 1: 16-bit bus
This bit is determined by GPG15 pin status during reset
and wake-up from sleep mode.
After reset, the GPG15 can be used as general I/O port or
External interrupt.
This bit can be changed by software.
H/W Set
(GPG15)
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