Samsung YP-P10 User Manual download pdf (Page 558)

100

101

S3C2440A RISC MICROPROCESSOR ELECTRICAL DATA

27-5

Normal I/O PAD DC Electrical Characteristics for I/O (V

DDOP

= 3.3V ± 0.3V, T

= –40 to 85 °C)

Symbol Parameters Condition Min Typ. Max Unit

High level input voltage V

LVCMOS interface 2.0

Low level input voltage V

LVCMOS interface 0.8

VT Switching threshold 0.5V

VT+ Schmitt trigger, positive-going threshold CMOS 2.0 V

VT– Schmitt trigger, negative-going threshold CMOS 0.8 V

High level input current µA

Input buffer V

= V

–10 10

Low level input current µA

Input buffer V

= V

–10 10

Input buffer with pull-up –60 –33 –10

High level output voltage V

Type B4 to B12 I

= – 1 µA V

–0.05

Type B4 I

= – 4 mA 2.4

Type B6 I

= – 6 mA

Type B8 I

= – 8 mA

Type B10 I

= –10 mA

Type B12 I

= –12 mA

Low level output voltage V

Type B4 to B12 I

= 1 µA 0.05

Type B4 I

= 4 mA 0.4

Type B6 I

= 6 mA

Type B8 I

= 8 mA

Type B10 I

= 10 mA

Type B12 I

= 12 mA

NOTES:

1. Type B6 means 6mA output driver cell.

2. Type B8 means 8mA output driver cell.

3. Type B12 means 12mA output driver cells.

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