Samsung YP-P10 User Manual Page 556

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S3C2440A RISC MICROPROCESSOR ELECTRICAL DATA
27-3
D.C. ELECTRICAL CHARACTERISTICS
Table 27-3 and 27-4 defines the DC electrical characteristics for the standard LVCMOS I/O buffers.
Table 27-3. Normal I/O PAD DC Electrical Characteristics
Normal I/O PAD DC Electrical Characteristics for Memory (VDDMOP = 2.5V ± 0.2V, T
A
= –40 to 85 °C)
Symbol Parameters Condition Min Typ. Max Unit
V
IH
High level input voltage V
LVCMOS interface 1.7
V
IL
Low level input voltage V
LVCMOS interface 0.7
VT Switching threshold 0.5V
DD
V
VT+ Schmitt trigger, positive-going threshold CMOS 2.0 V
VT– Schmitt trigger, negative-going threshold CMOS 0.8 V
I
IH
High level input current µA
Input buffer V
IN
= V
DD
–10 10
I
IL
Low level input current µA
Input buffer V
IN
= V
SS
–10 10
Input buffer with pull-up –60 –33 –10
V
OH
High level output voltage V
Type B4 to B12 I
OH
= – 1 µA V
DD
–0.05
Type B4 I
OH
= – 4 mA 2.0
Type B6 I
OH
= – 6 mA
Type B8 I
OH
= – 8 mA
Type B10 I
OH
= – 10 mA
Type B12 I
OH
= – 12mA
V
OL
Low level output voltage V
Type B4 to B12 I
OL
= 1 µA 0.05
Type B4 I
OL
= 4 mA 0.4
Type B6 I
OL
= 6 mA
Type B8 I
OL
= 8 mA
Type B10 I
OL
= 10 mA
Type B12 I
OL
= 12 mA
NOTES:
1. Type B6 means 6mA output driver cell.
2. Type B8 means 8mA output driver cell.
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